SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PDTD113ZUX is an NPN Resistor-Equipped Transistor (RET) from the PDTD1xxxU series, housed in a SOT323 (SC-70) surface-mounted plastic package. It features built-in bias resistors with R1 at 1 kΩ and R2 at 10 kΩ. The device supports a collector-emitter voltage of 50 V and an output current of 500 mA. Key electrical characteristics include a DC current gain (hFE) of 70 at 50 mA, a collector-emitter saturation voltage of 100 mV at 50 mA, and a transition frequency of 225 MHz. It operates within an ambient temperature range of -55 °C to +175 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm availability status and packaging details. Confirm that the requested part matches the exact marking code ZQ* associated with this configuration. Ensure compliance with AEC-Q101 requirements if deploying in automotive environments.
Select this component when a compact NPN transistor solution with integrated base and base-emitter resistors is required. The 1 kΩ input resistance and 10 kΩ base-emitter resistance provide specific biasing characteristics suitable for direct logic interface. Consider the SOT323 package size constraints and thermal dissipation limits on the PCB.
This device belongs to the PDTD1xxxU family of NPN resistor-equipped transistors manufactured by Nexperia. It serves as the NPN counterpart to the PDTB113ZU PNP variant. The 'Z' designation in the model number specifically indicates the 1 kΩ / 10 kΩ resistor combination within the SC-70 package form factor.
PDTB113ZU (PNP complement)
The PDTD113ZUX has a bias resistor R1 (input) of 1 kΩ and a bias resistor R2 (base-emitter) of 10 kΩ.
Yes, the PDTD1xxxU series is qualified according to the AEC-Q101 standard for discrete semiconductors.
The maximum junction temperature (Tj) for this device is 175 °C.