SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PDTD114EQAZ is an NPN Resistor-Equipped Transistor (RET) from Nexperia, housed in a leadless DFN1010D-3 (SOT1215) package with visible side pads. It features built-in bias resistors of 10 kΩ each (R1 and R2), offering a ratio tolerance of ±10%. The device supports a collector-emitter voltage (VCEO) of 50 V and an output current (IO) of 500 mA. Key electrical characteristics include a DC current gain (hFE) of 70 at IC=50 mA, a saturation voltage (VCEsat) of 100 mV at IC=50 mA, and a transition frequency (fT) of 210 MHz. It operates within an ambient temperature range of -55°C to +150°C and is qualified under AEC-Q101 standards.
Verify the complete part number including the reel/tape suffix when ordering. Confirm that the DFN1010D-3 footprint matches your PCB layout, specifically accounting for the side pad dimensions. Ensure supply chain sources provide original manufacturer documentation to validate AEC-Q101 qualification status.
Select this component for designs requiring a compact NPN switch with integrated base drive. The 10 kΩ resistor values are suitable for standard logic level driving. Consider the low profile and side-pad thermal dissipation capabilities if space or heat management is constrained compared to traditional SOT packages.
This device belongs to the PDTD113/123/143/114EQA series of 50 V, 500 mA NPN RETs. It serves as a cost-saving alternative to discrete transistor and resistor combinations, such as those replacing BC817 series components in digital switching applications.
Direct functional equivalents within the same series include PDTD113EQA, PDTD123EQA, and PDTD143EQA, which differ primarily in internal resistor values. For pin-compatible replacements with different resistance ratios, verify the specific R1/R2 requirements of the target application.