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The PDTD114ET-QR is a single NPN resistor-equipped transistor (RET) manufactured by Nexperia USA Inc. It features an integrated base resistor of 10 kOhms and an open emitter connection, housed in a surface-mount SOT-23 package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. With a power dissipation rating of 250 mW and a transition frequency of 150 MHz, it operates within a temperature range of -55°C to +150°C. This component holds AEC-Q101 qualification for automotive applications.
Verify the specific suffix ET-QR against official Nexperia documentation to confirm the exact tape and reel packaging configuration and automotive grade status. Ensure compatibility with standard SOT-23 footprint requirements during procurement planning. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing orders.
Select this component when a compact NPN switch with built-in base resistance is required for space-constrained designs. The 10 kOhm internal resistor value dictates the input impedance characteristics; verify that this matches the driving source capabilities. Consider the 100 mA current limit and 250 mW thermal dissipation constraints relative to the expected load conditions and ambient operating temperatures.
This part belongs to the PDTD series of NPN digital transistors from Nexperia. It is functionally similar to other RETs like the PDTC114TS but differs in polarity and integration. The Q-R suffix typically denotes automotive qualification and specific reel packaging, distinguishing it from standard commercial variants within the broader Nexperia transistor portfolio.
Publicly confirmed substitute part numbers are not available in the provided reference data. Engineers should consult official Nexperia cross-reference tools or datasheets for verified equivalents that match the SOT-23 package, 50V rating, and 10kOhm base resistance specifications.