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Product Detailed Parameters
- Description：PDTD114ET-Q/SOT23/TO-236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Resistors Included：-
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The PDTD114ET-QVL is an NPN resistor-equipped transistor (RET) manufactured by Nexperia USA Inc. It integrates a single NPN bipolar junction transistor with built-in bias resistors R1 and R2, typically 10 kΩ each, within a compact SOT-23 surface-mount package. The device supports a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. It operates reliably across a temperature range from -55 °C to +150 °C with a power dissipation rating of 200 mW. This component simplifies circuit design by reducing the external component count required for digital switching applications.
Feature Summary
- Integrates NPN transistor with dual bias resistors to minimize board space
- Optimized for high-speed digital switching in interface circuits
- Designed for automated pick-and-place assembly processes
Applications
- Interface and driver circuit configurations
- Inverter circuit designs eliminating external resistors
- Digital logic level shifting applications
Procurement Notes
Verify the specific suffix QVL against official Nexperia documentation to confirm tape and reel specifications and moisture sensitivity level. Ensure compatibility with standard SMT reflow profiles. Cross-reference the 12NC code for accurate ordering details and regional availability through authorized distributors.
Selection Notes
Select this component when space constraints require integrated biasing for NPN switching. Compare performance metrics such as transition frequency and saturation voltage against discrete alternatives. Confirm that the 50 V breakdown voltage and 100 mA current capacity meet the specific load requirements of the target application circuit.
Part Context
This part belongs to the PDTD114ET family of NPN resistor-equipped transistors. It serves as the NPN counterpart to the PDTA114ET PNP variant. The series is designed to replace multiple discrete components, offering a cost-effective solution for digital signal processing and control logic interfaces in consumer and industrial electronics.
Replacement Considerations
Direct substitutes include the PDTA114ET for complementary PNP functionality or other RETs with identical pinouts and electrical ratings. Verify package compatibility and thermal characteristics before substitution.
