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The PDTD114ETVL is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc., housed in a SOT23 (TO-236AB) surface-mount package. It integrates bias resistors R1 and R2, both nominally 10 kΩ with a ±10% ratio tolerance. The device supports a collector-emitter voltage of 50 V and an output current of 500 mA. Key electrical characteristics include a DC current gain (hFE) minimum of 70 at 50 mA, a transition frequency of 225 MHz, and a total power dissipation of 320 mW. Qualified under AEC-Q101 standards, it operates within a junction temperature range up to 175 °C.
Verify the specific suffix 'VL' against official Nexperia documentation to confirm packaging details such as tape and reel specifications or marking codes. Ensure the ordering information matches the required quantity format and that the component status remains active for production use.
Select this component when a compact NPN solution with integrated base biasing is required. The 10 kΩ internal resistors eliminate external components, saving board space. Verify that the 50 V rating and 500 mA current capacity meet the specific load requirements of the target application.
This part belongs to the PDTD1XXXT series of NPN resistor-equipped transistors. It serves as the NPN complement to the PDTB114ET PNP variant. Both devices share similar electrical profiles and are designed for high-volume digital switching applications requiring minimal external passive components.
Direct functional substitutes within the same family include the PDTD114ET without the 'VL' suffix, assuming identical packaging and marking requirements. Cross-family replacements must match the 50 V, 500 mA, and 10 kΩ resistor configuration.