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The PDTD114EUF is an NPN Resistor-Equipped Transistor (RET) from the PDTD1xxxU series, housed in a SOT323 (SC-70) surface-mount package. It features built-in bias resistors with R1 at 10 kΩ and R2 at 10 kΩ. The device supports a collector-emitter voltage of 50 V and an output current capability of 500 mA. Key electrical characteristics include a DC current gain (hFE) of 70 at 50 mA, a transition frequency of 225 MHz, and a maximum junction temperature of 175 °C. It is AEC-Q101 qualified for automotive applications.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel size or tape configuration. Confirm RoHS compliance status and ensure the marking code matches the datasheet specifications before finalizing procurement orders.
Select this component when a compact NPN transistor with integrated base and base-emitter resistors is required. Ensure the 10 kΩ resistor values align with the target logic levels and drive requirements. Verify that the 500 mA current rating and 50 V voltage limits exceed the application's peak operating conditions.
This part belongs to the PDTD1xxxU family of NPN resistor-equipped transistors. It serves as the complement to the PDTB114EU PNP RET. The 'U' suffix indicates the SC-70/SOT323 package variant within the broader product line.
PDTB114EU (complementary PNP type)
The input bias resistor (R1) is 10 kΩ and the base-emitter bias resistor (R2) is 10 kΩ.
Yes, the PDTD114EUF is qualified according to the AEC-Q101 standard for discrete semiconductors.
The maximum junction temperature is 175 °C.