PDTD114EUF

PDTD114EUF

$0.04
  • Description:TRANS PREBIAS NPN 50V SOT323
  • Series:-

SKU:b9c31fcb92a1 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT323
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:100mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:225 MHz
  • Power - Max:300 mW
  • Grade:Automotive
  • Qualification:AEC-Q100
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323

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PDTD114EUF

Overview

The PDTD114EUF is an NPN Resistor-Equipped Transistor (RET) from the PDTD1xxxU series, housed in a SOT323 (SC-70) surface-mount package. It features built-in bias resistors with R1 at 10 kΩ and R2 at 10 kΩ. The device supports a collector-emitter voltage of 50 V and an output current capability of 500 mA. Key electrical characteristics include a DC current gain (hFE) of 70 at 50 mA, a transition frequency of 225 MHz, and a maximum junction temperature of 175 °C. It is AEC-Q101 qualified for automotive applications.

Feature Summary

  • Built-in bias resistors simplify circuit design and reduce component count
  • AEC-Q101 qualified for use in automotive applications
  • High temperature operation up to 175 °C
  • ±10% resistor ratio tolerance

Applications

  • Controlling IC inputs
  • Switching loads
  • Digital applications as a cost-saving alternative to BC807 or BC817 series transistors

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel size or tape configuration. Confirm RoHS compliance status and ensure the marking code matches the datasheet specifications before finalizing procurement orders.

Selection Notes

Select this component when a compact NPN transistor with integrated base and base-emitter resistors is required. Ensure the 10 kΩ resistor values align with the target logic levels and drive requirements. Verify that the 500 mA current rating and 50 V voltage limits exceed the application's peak operating conditions.

Part Context

This part belongs to the PDTD1xxxU family of NPN resistor-equipped transistors. It serves as the complement to the PDTB114EU PNP RET. The 'U' suffix indicates the SC-70/SOT323 package variant within the broader product line.

Replacement Considerations

PDTB114EU (complementary PNP type)

FAQ

What are the resistance values for the built-in resistors?

The input bias resistor (R1) is 10 kΩ and the base-emitter bias resistor (R2) is 10 kΩ.

Is this component suitable for automotive electronics?

Yes, the PDTD114EUF is qualified according to the AEC-Q101 standard for discrete semiconductors.

What is the maximum junction temperature?

The maximum junction temperature is 175 °C.

PDTD114EUFPDTD114EUF
$0.04
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