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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT323
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic：100mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：225 MHz
- Power - Max：300 mW
- Grade：Automotive
- Qualification：AEC-Q100
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SOT-323
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Overview
The PDTD114EUX is an NPN Resistor-Equipped Transistor (RET) from the PDTD1xxxU series, housed in a SOT323 (SC-70) surface-mounted package. It features built-in bias resistors with R1 at 10 kΩ and R2 at 10 kΩ, providing a resistor ratio of 1:1. The device supports a collector-emitter voltage (VCEO) of 50 V and an output current (IO) of 500 mA. Key electrical characteristics include a DC current gain (hFE) of 70 at IC = 50 mA, a collector-emitter saturation voltage (VCEsat) of 100 mV max at IC = 50 mA, and a transition frequency (fT) of 225 MHz. It operates within a junction temperature range up to 175 °C.
Feature Summary
- Integrates input and base-emitter bias resistors to simplify circuit design and reduce component count.
- AEC-Q101 qualified for automotive applications with high-temperature capability up to 175 °C.
- Provides ±10% resistor ratio tolerance for consistent performance.
Applications
- IC inputs control
- Switching loads
- Digital applications
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel or cut tape specifications. Ensure compliance with RoHS directives and check for any recent product change notices that may affect availability or manufacturing location before finalizing procurement orders.
Selection Notes
Select this component when a compact NPN transistor solution with integrated biasing is required for digital switching or load control. The 10 kΩ resistor values are suitable for standard logic interface applications. Consider the 500 mA current rating and 50 V breakdown voltage to ensure adequate headroom for the intended load conditions.
Part Context
This part belongs to the PDTD1xxxU series of NPN Resistor-Equipped Transistors manufactured by Nexperia. It serves as a cost-saving alternative to discrete BC817 series transistors in digital applications. The complementary PNP version is available as the PDTB114EU, sharing the same SOT323 package and general form factor.
Replacement Considerations
Publicly confirmed substitute part numbers are not provided in the source material. Designers should consult Nexperia's official cross-reference tools or distributor databases for equivalent components if direct replacement is necessary.
FAQ
What are the resistance values for the built-in resistors in the PDTD114EUX?
The PDTD114EUX includes a bias resistor R1 (input) of 10 kΩ and a bias resistor R2 (base-emitter) of 10 kΩ.
Is the PDTD114EUX suitable for automotive applications?
Yes, the PDTD114EUX is AEC-Q101 qualified, making it suitable for use in automotive applications.
What is the maximum junction temperature for this device?
The maximum junction temperature (Tj) for the PDTD114EUX is 175 °C.
