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The PDTD123EQAZ is an NPN Resistor-Equipped Transistor (RET) from Nexperia, housed in a leadless DFN1010D-3 (SOT1215) package with visible side pads. It features built-in bias resistors R1 and R2, both typically 2.2 kΩ. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous output current (IO) of 500 mA. It operates within a junction temperature range of -55 °C to +150 °C and has a maximum power dissipation of 325 mW at 25 °C ambient temperature on a standard FR4 PCB.
Verify the specific suffix 'Z' against official Nexperia documentation to confirm tape-and-reel packaging specifications. Ensure the ordering part number matches the required AEC-Q101 qualification status. Cross-reference the marking code '01 01 10' to validate authenticity upon receipt.
Select this component when a compact NPN digital transistor with 2.2 kΩ internal biasing is required. The DFN1010D-3 package offers a low profile ideal for high-density boards. Consider the 500 mA current capability and 50 V voltage rating for load switching or interface driver roles.
This device belongs to the PDTD113/123/143/114EQA family of NPN resistor-equipped transistors. It serves as the complement to the PDTB123EQA PNP variant. The EQA series is distinguished by its ultra-thin DFN1010D-3 package and automotive qualification, differentiating it from standard SMD packages like SOT23.
PDTB123EQA is the PNP complement within the same family. For pin-compatible replacements in other packages, consider PDTD123ET (SOT23). Verify thermal resistance differences if replacing with non-DFN packages.