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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V TO92-3
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Box (TB)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：500 mW
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
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Overview
The PDTD123ES,126 is an NPN Resistor-Equipped Transistor (RET) from the PDTD123E series, manufactured by Nexperia. It features a built-in bias resistor network with R1 = 2.2 kΩ and R2 = 2.2 kΩ. The device supports a maximum collector-emitter voltage of 50 V and a continuous DC output current of 500 mA. It utilizes the SOT54 package (SC-43A/TO-92), which provides a thermal resistance from junction to ambient of 250 K/W in free air. The component is designed for digital applications requiring simplified circuit design and reduced component count.
Feature Summary
- Built-in bias resistors simplify circuit design and reduce component count
- Supports 500 mA output current capability for switching loads
- Features ±10% resistor ratio tolerance for consistent performance
Applications
- Digital applications in automotive and industrial segments
- Controlling IC inputs
- Switching loads
Procurement Notes
Verify the ordering suffix '126' corresponds to the specific tape ammopack packing method for the SOT54 package as defined in the official datasheet. Confirm that the manufacturer designation aligns with Nexperia B.V., following the transition from the former NXP Standard Product business. Ensure the part number matches the D123ES marking code for correct identification during assembly.
Selection Notes
Select this component when an NPN transistor with integrated base biasing is required for digital logic interfacing. The SOT54 through-hole package is suitable for designs needing robust mechanical mounting. Verify that the 500 mA current rating and 50 V breakdown voltage meet the specific load requirements of the target application circuit.
Part Context
This component belongs to the PDTD123E series of NPN resistor-equipped transistors. It serves as the NPN counterpart to the PDTB123ES PNP variant. The series is engineered as a cost-saving alternative to standard discrete transistor pairs like the BC817 series in digital switching applications, offering pre-biased functionality in a single package.
Replacement Considerations
The PDTB123ES is the complementary PNP type within the same family. For direct functional replacement in NPN circuits, verify pinout compatibility if substituting with other RET families. No other specific substitute part numbers are documented in the provided source material.
