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The PDTD123ET-QR is an NPN Resistor-Equipped Transistor (RET) from Nexperia, designed for surface-mount applications in the SOT-23 (TO-236AB) plastic package. It integrates a single NPN transistor with two internal resistors: R1 and R2, both specified at 2.2 kΩ. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 500 mA. It operates within a temperature range of -65°C to +150°C. This component is part of Nexperia’s automotive-grade product portfolio, intended for robust electronic circuit designs requiring compact switching solutions.
Verify the specific suffix 'QR' against the official Nexperia datasheet to confirm it denotes the standard tape-and-reel packaging format rather than a variant with altered electrical characteristics. Ensure the ordering code matches the exact RoHS and halogen-free compliance status required by your manufacturing specifications before finalizing procurement.
Select this component when an NPN RET with 50 V rating and 2.2 kΩ input/output resistors is required for automotive applications. Compare against the PDTB123ET-QR if a PNP configuration is needed instead. Verify that the SOT-23 package thermal dissipation capabilities meet the specific power load requirements of the target circuit design.
This part belongs to Nexperia's PDTD series of NPN resistor-equipped transistors. The '-Q' prefix typically indicates automotive-grade qualification, while 'R' often specifies reel packaging. It serves as the NPN counterpart to the PDTB123ET-QR PNP device, offering a standardized solution for digital switching tasks in high-reliability sectors.
Direct substitutes include other AEC-Q101 qualified NPN RETs with identical 50 V/500 mA ratings and 2.2 kΩ resistor values in an SOT-23 package. Verify pinout compatibility and thermal resistance parameters before swapping with generic industrial-grade RETs.