PDTD123ET,215

PDTD123ET,215

$0.26
  • Description:TRANS PREBIAS NPN 50V TO236AB
  • Series:-

SKU:111274962233 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V TO236AB
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250 mW
  • Grade:Automotive
  • Qualification:AEC-Q100
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:TO-236AB

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PDTD123ET,215

Overview

The PDTD123ET,215 is a single NPN resistor-equipped transistor (RET) housed in an SOT-23 surface-mount package. It integrates bias resistors with a typical input resistance (R1) of 2.2 kΩ and a bias resistor ratio (R2/R1) of 1.0. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous DC output current (IO) of 500 mA. Key electrical characteristics include a DC current gain (hFE) of at least 40 at IC = 50 mA, a collector-emitter saturation voltage (VCEsat) of 0.3 V max at IC = 50 mA, and a total power dissipation (Ptot) of 250 mW. The junction temperature range extends from -65 °C to +150 °C.

Feature Summary

  • Built-in bias resistors simplify circuit design and reduce component count.
  • ±10% tolerance on the internal bias resistor ratio ensures consistent performance.
  • Provides a cost-saving alternative for discrete BC817 series transistors in digital applications.

Applications

  • Controlling IC inputs
  • Switching loads
  • Inverter and interface circuits

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm the exact packing method and reel specifications. Confirm RoHS compliance status through the manufacturer's latest product data sheet or compliance declarations before finalizing procurement orders.

Selection Notes

Select this component when a compact NPN switching solution with integrated base biasing is required. Ensure the application current does not exceed the 500 mA limit and that the PCB layout accommodates the thermal requirements associated with the SOT-23 package's 250 mW power dissipation rating.

Part Context

This part belongs to the PDTD123E series of NPN resistor-equipped transistors manufactured by Nexperia. The 'ET' designation specifically identifies the SOT-23 plastic surface-mounted package variant. The ',215' suffix indicates the specific tape-and-reel packaging configuration used for automated assembly.

Replacement Considerations

The PDTB123ET serves as the direct PNP complement within the same family. For pin-compatible replacements, verify that substitute components match the 50 V voltage rating, 500 mA current capability, and similar internal resistor values to maintain circuit functionality without redesign.

FAQ

What are the values of the internal bias resistors?

The typical input bias resistor (R1) is 2.2 kΩ, and the bias resistor ratio (R2/R1) is 1.0, meaning R2 is also approximately 2.2 kΩ.

What is the maximum power dissipation for the SOT-23 package?

The total power dissipation (Ptot) for the PDTD123ET in the SOT-23 package is 250 mW at an ambient temperature of 25 °C.

How is the device pinout configured?

For the SOT-23 package, Pin 1 is the input (base), Pin 2 is GND (emitter), and Pin 3 is the output (collector).

PDTD123ET,215PDTD123ET,215
$0.26
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