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The PDTD123EUX is an NPN Resistor-Equipped Transistor (RET) from the PDTD1xxxU series, housed in a SOT323 (SC-70) surface-mounted plastic package. It features built-in bias resistors with typical values of R1 = 2.2 kΩ and R2 = 2.2 kΩ. The device supports a collector-emitter voltage (VCEO) of 50 V and an output current (IO) of 500 mA. It includes AEC-Q101 qualification for automotive applications and operates at high temperatures up to 175 °C.
Verify the specific suffix 'X' against official Nexperia documentation to confirm manufacturing site codes and tape-and-reel specifications. Ensure compliance with RoHS directives and REACH regulations before procurement. Confirm that the SOT323 footprint matches the target PCB layout requirements.
Select this component when a compact NPN transistor with integrated base biasing is required. The 2.2 kΩ input resistor value suits standard logic interface applications. Consider the PDTD123YU variant if a different internal resistor ratio is needed while maintaining the same package and electrical ratings.
This part belongs to the PDTD1xxxU series of NPN resistor-equipped transistors. It serves as the NPN complement to the PDTB123EU PNP RET. The series offers various resistor combinations within the small SOT323 package to support diverse digital switching needs.
PDTD123EU
For the PDTD123EUX, both the input bias resistor (R1) and the base-emitter bias resistor (R2) have typical values of 2.2 kΩ.
Yes, the PDTD123EUX is AEC-Q101 qualified, making it suitable for use in automotive electronics.