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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.5A SMT3
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SMT3; MPAK
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Overview
The PDTD123TK,115 is an NPN resistor-equipped transistor (RET) from the PDTD123T series, manufactured by Nexperia. It features a built-in bias resistor R1 of 2.2 kΩ with R2 open. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous output current (IO) of 500 mA. It is housed in the SOT346 (SC-59A/TO-236) surface-mount package. Key electrical characteristics include a DC current gain (hFE) of 100 to 300 at IC = 50 mA and VCE = 5 V, and a maximum collector-emitter saturation voltage of 0.3 V at IC = 50 mA and IB = 2.5 mA. Total power dissipation is rated at 250 mW.
Feature Summary
- Integrates a single bias resistor to reduce component count and simplify circuit design.
- Provides 500 mA output current capability for switching loads.
- Designed as a cost-saving alternative for BC817 series transistors in digital applications.
Applications
- Controlling IC inputs
- Switching loads
- Digital applications in automotive and industrial segments
Procurement Notes
Verify the manufacturer designation, as the former NXP Standard Product business operates under the Nexperia brand. Confirm the specific ordering suffix
Selection Notes
Select this component when a single NPN transistor with a fixed base bias resistor is required. The PDTD123TK variant specifically utilizes the SOT346 surface-mount package. Ensure the application requires an open emitter-base resistor configuration (R2 open). For through-hole requirements, consider the PDTD123TS or PDTD123TT variants within the same series.
Part Context
This part belongs to the PDTD123T family of NPN resistor-equipped transistors. The 'TK' suffix denotes the SOT346 (SC-59A/TO-236) plastic surface-mounted package with three leads. The '115' suffix indicates the packing method, which corresponds to 4 mm pitch tape and reel packaging with a quantity of 3000 units per reel.
Replacement Considerations
The PDTB123TK is the documented PNP complement within the same series. Designers replacing discrete BC817 components should verify that the integrated bias resistor values meet the specific drive requirements of the target circuit.
FAQ
What is the value of the internal bias resistor?
The internal bias resistor R1 has a typical value of 2.2 kΩ, with a minimum of 1.54 kΩ and a maximum of 2.86 kΩ.
Is there an internal base-emitter resistor?
No, the PDTD123T series specifies R2 as open, meaning no internal base-emitter resistor is present.
What is the maximum total power dissipation for the SOT346 package?
The maximum total power dissipation (Ptot) for the SOT346 package is 250 mW at an ambient temperature of 25 °C.
