PDTD123TT,215

Overview

The PDTD123TT,215 is an NPN Resistor-Equipped Transistor (RET) from the Nexperia PDTD123T series. It integrates a single bias resistor R1 with a value of 2.2 kΩ, while R2 remains open. The device supports a collector-emitter voltage (VCEO) of 50 V and an output current (IO) of 500 mA. It is housed in the SOT23 plastic surface-mounted package. Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 300 at IC = 50 mA and VCE = 5 V, and a maximum collector-emitter saturation voltage (VCEsat) of 0.3 V at IC = 50 mA and IB = 2.5 mA.

Feature Summary

• Integrates built-in bias resistors to reduce component count and simplify circuit design.
• Provides 500 mA output current capability for switching loads.
• Offers a cost-saving alternative to discrete transistor configurations in digital applications.

Applications

• Controlling IC inputs
• Switching loads
• Digital applications in automotive and industrial segments

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this part when a compact NPN switch with integrated base biasing is required. The SOT23 package suits space-constrained designs. Ensure the 50 V voltage rating and 500 mA current capacity meet the load requirements. Verify that the 2.2 kΩ input resistor aligns with the driving source impedance and logic levels.

Part Context

This component belongs to the PDTD123T family of NPN resistor-equipped transistors. Other variants in the series include PDTD123TK in the SOT346 package and PDTD123TS in the SOT54 through-hole package. All share identical electrical specifications but differ in physical packaging and pinout arrangements.

Replacement Considerations

Direct replacements within the same family include PDTD123TK and PDTD123TS, provided the package form factor change is acceptable. For equivalent performance in different packages, verify pin compatibility and thermal resistance differences.