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The PDTD123YK,115 is an NPN Resistor-Equipped Transistor (RET) from the PDTD123Y series manufactured by Nexperia. It integrates bias resistors within a single SOT346 (SC-59A/TO-236) surface-mount package. Key electrical parameters include a collector-emitter voltage of 50 V and a DC output current capability of 500 mA. The device features a typical input bias resistor (R1) of 2.2 kΩ with a range of 1.54 to 2.86 kΩ, and a bias resistor ratio (R2/R1) of 4.55. Total power dissipation is rated at 250 mW at 25 °C ambient temperature.
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm packaging details and availability status. Confirm that the SOT346 package variant matches the required footprint for the target PCB layout. Ensure compliance with RoHS directives as indicated in the product data sheet before finalizing procurement specifications.
Select this component when a compact NPN solution with integrated base biasing is required for high-current switching up to 500 mA. The SOT346 package is suitable for space-constrained surface-mount designs. Consider the thermal resistance characteristics if operating near maximum power dissipation limits or in elevated ambient temperatures.
This part belongs to the PDTD123Y series of NPN resistor-equipped transistors. It serves as the NPN complement to the PDTB123YK PNP counterpart. The series is designed to replace discrete transistor and resistor networks, offering a simplified assembly process for general-purpose switching tasks in consumer and industrial electronics.
The PDTB123YK is the direct PNP complement within the same family. For pin-compatible replacements, verify equivalent current ratings and resistor values in other RET families. Cross-reference with standard BC817 series components only if discrete resistor additions are acceptable in the design.