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The PDTD123YQAZ is an NPN Resistor-Equipped Transistor (RET) from the PDTD113Z/123Y/143XQA series, housed in a leadless DFN1010D-3 (SOT1215) package. It features built-in bias resistors with R1 at 2.2 kΩ and R2 at 10 kΩ. The device supports a maximum collector-emitter voltage of 50 V and an output current capability of 500 mA. Total power dissipation reaches 325 mW at 25°C ambient temperature on standard FR4 PCBs. The component is AEC-Q101 qualified for automotive applications.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and qualification status. Ensure compatibility with automated assembly processes given the leadless DFN1010D-3 form factor. Cross-reference marking codes for production batch identification during quality control checks.
Select this RET when space constraints require a compact SMD solution with integrated biasing. The 50 V rating and 500 mA current capacity suit general-purpose switching tasks. Consider the thermal resistance characteristics relative to the PCB copper area for adequate heat dissipation in high-density designs.
This component belongs to the Nexperia PDTD113Z/123Y/143XQA series of NPN resistor-equipped transistors. It serves as a digital alternative to discrete transistor-resistor networks, offering cost savings through reduced pick-and-place operations. The series includes complementary PNP types within the same package family.
The PDTB123YQA is the documented PNP complement within the same datasheet series. Designers requiring inverted logic or complementary switching stages should reference the PDTB123YQA specifications for pin-compatible integration.