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The PDTD123YS,126 is an NPN Resistor-Equipped Transistor (RET) from the PDTD123Y series manufactured by NXP Semiconductors. It features a built-in bias resistor network with R1 at 2.2 kΩ and R2 at 10 kΩ, providing a typical ratio of 4.55. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous DC output current (IO) of 500 mA. It utilizes the SOT54 package, also known as SC-43A or TO-92, which is a plastic single-ended leaded through-hole configuration. The component operates within an ambient temperature range of -65 °C to +150 °C.
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm the packing method. The suffix indicates tape and reel packaging with wide pitch. Confirm availability status directly with authorized distributors, as production lifecycles may change. Ensure the procurement channel provides valid traceability for the SOT54 package variant.
Select this component when a through-hole NPN transistor with integrated biasing is required for digital switching. The SOT54 package suits applications needing manual assembly or specific mechanical constraints incompatible with surface-mount packages. Verify that the 500 mA current rating and 50 V voltage limits align with the target load requirements.
This part belongs to the PDTD123Y series of NPN resistor-equipped transistors. It serves as the complement to the PDTB123YS PNP device. The series is designed as a cost-saving alternative to standard discrete transistor configurations, offering simplified design processes for digital logic interfaces and driver circuits.
PDTB123YS is the PNP complement within the same family. Other variants like PDTD123YT (SOT23) offer similar electrical characteristics but differ in package type.