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The PDTD123YT/APGR is an NPN Resistor-Equipped Transistor (RET) from the PDTD123Y series, manufactured by Nexperia. It features a built-in bias resistor configuration with R1 = 2.2 kΩ and R2 = 10 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous DC output current (IO) of 500 mA. It is housed in a SOT23 plastic surface-mounted package (TO-236AB). The component operates within an ambient temperature range of -65 °C to +150 °C and has a total power dissipation of 250 mW at 25 °C.
Verify the specific suffix /APGR against official Nexperia documentation to confirm marking codes and origin details. Ensure compatibility with standard SOT23 footprints during PCB layout. Confirm RoHS compliance status through the manufacturer's latest product data sheet before finalizing procurement specifications.
Select this component when a compact NPN transistor solution with integrated base biasing is required. The 500 mA current capability and 50 V breakdown voltage make it suitable for general-purpose switching tasks. Consider the SOT23 package size constraints and thermal resistance characteristics relative to the application's power dissipation requirements.
This part belongs to the PDTD123Y series of NPN Resistor-Equipped Transistors. The series includes variants such as PDTD123YK (SOT346) and PDTD123YS (SOT54), offering different packaging options while maintaining identical electrical characteristics. The PDTD123YT specifically utilizes the SOT23 package format.
The PDTD123YK and PDTD123YS are electrically equivalent alternatives within the same series but utilize different packages (SOT346 and SOT54 respectively). Designers must verify pinout compatibility and physical footprint dimensions when substituting these variants.