PDTD123YT/APGR

PDTD123YT/APGR

  • Description:TRANS PREBIAS NPN 50V TO236AB
  • Series:PDTD123Y

SKU:f4ffeb0c615b Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V TO236AB
  • Series:PDTD123Y
  • Mfr:Nexperia USA Inc.
  • Package:Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:TO-236AB

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PDTD123YT/APGR

Overview

The PDTD123YT/APGR is an NPN Resistor-Equipped Transistor (RET) from the PDTD123Y series, manufactured by Nexperia. It features a built-in bias resistor configuration with R1 = 2.2 kΩ and R2 = 10 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous DC output current (IO) of 500 mA. It is housed in a SOT23 plastic surface-mounted package (TO-236AB). The component operates within an ambient temperature range of -65 °C to +150 °C and has a total power dissipation of 250 mW at 25 °C.

Feature Summary

  • Built-in bias resistors simplify circuit design and reduce component count
  • ±10% resistor ratio tolerance ensures consistent performance
  • Suitable for automated pick and place manufacturing processes

Applications

  • Digital applications in automotive and industrial segments
  • Cost-saving alternative for BC817 series in digital applications
  • Controlling IC inputs
  • Switching loads

Procurement Notes

Verify the specific suffix /APGR against official Nexperia documentation to confirm marking codes and origin details. Ensure compatibility with standard SOT23 footprints during PCB layout. Confirm RoHS compliance status through the manufacturer's latest product data sheet before finalizing procurement specifications.

Selection Notes

Select this component when a compact NPN transistor solution with integrated base biasing is required. The 500 mA current capability and 50 V breakdown voltage make it suitable for general-purpose switching tasks. Consider the SOT23 package size constraints and thermal resistance characteristics relative to the application's power dissipation requirements.

Part Context

This part belongs to the PDTD123Y series of NPN Resistor-Equipped Transistors. The series includes variants such as PDTD123YK (SOT346) and PDTD123YS (SOT54), offering different packaging options while maintaining identical electrical characteristics. The PDTD123YT specifically utilizes the SOT23 package format.

Replacement Considerations

The PDTD123YK and PDTD123YS are electrically equivalent alternatives within the same series but utilize different packages (SOT346 and SOT54 respectively). Designers must verify pinout compatibility and physical footprint dimensions when substituting these variants.

PDTD123YT/APGRPDTD123YT/APGR

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