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The PDTD123YT-QR is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia, housed in a SOT23 surface-mounted package. It integrates bias resistors R1 and R2 with nominal values of 2.2 kΩ and 10 kΩ respectively. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous output current (IO) of 500 mA. Key electrical characteristics include a DC current gain (hFE) minimum of 70 at 50 mA and a total power dissipation of 250 mW. The component operates within an ambient temperature range of -65 °C to 150 °C and features a ±10% resistor ratio tolerance.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape configuration. Confirm that the requested part number matches the exact electrical specifications and package dimensions defined in the product data sheet before finalizing procurement orders.
Select this component when a compact NPN transistor with integrated base biasing is required for digital switching tasks. Ensure the design accommodates the 50 V collector-emitter voltage limit and 500 mA output current capacity. Verify that the SOT23 package footprint aligns with the PCB layout requirements and thermal management constraints for the intended operating environment.
This device belongs to the Nexperia PDTD123 series of NPN resistor-equipped transistors. It serves as the complement to the PDTB123YT-Q PNP variant. The 'QR' suffix typically denotes specific packaging or handling attributes within the Nexperia portfolio, distinct from the core electrical performance defined by the PDTD123YT-Q designation.
Direct functional substitutes within the same family include the PDTB123YT-Q PNP complement. Other NPN RETs with similar 50 V ratings and SOT23 packages may be considered if resistor values and current capabilities match the design requirements.