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The PDTD123YT,215 is an NPN Resistor-Equipped Transistor (RET) from the PDTD123Y series, manufactured by Nexperia USA Inc. It integrates bias resistors within a single SOT-23 (TO-236AB) plastic surface-mounted package. The device features a collector-emitter voltage (VCEO) of 50 V and a continuous DC output current (IO) of 500 mA. Internal resistor values include R1 at 2.2 kΩ and R2 at 10 kΩ, with a typical R2/R1 ratio of 4.55. Total power dissipation is rated at 250 mW, and the junction temperature range extends up to 150 °C.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and manufacturing origin. Ensure compatibility with existing PCB footprints for the SOT-23 package. Confirm RoHS compliance status through the manufacturer's latest product data sheet before finalizing procurement specifications.
Select this component when a compact NPN solution with integrated base biasing is required for high-current switching tasks. The SOT-23 package offers space efficiency compared to through-hole alternatives. Consider the 500 mA current rating and 50 V breakdown voltage to ensure adequate headroom for the target application's electrical requirements.
This part belongs to the PDTD123Y family of NPN resistor-equipped transistors. It serves as the NPN counterpart to the PDTB123YT PNP variant. The series provides standardized internal resistor ratios to facilitate consistent performance across various digital switching designs without requiring external biasing components.
The PDTB123YT is the documented PNP complement within the same series. For direct functional substitution in complementary circuits, verify pinout alignment and polarity differences between the NPN and PNP variants.