PDTD143ET-QR

PDTD143ET-QR

$0.04
  • Description:TRANS PREBIAS NPN 50V TO236AB
  • Series:-

SKU:1970b4b866fc Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V TO236AB
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:100mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:225 MHz
  • Power - Max:320 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:TO-236AB

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PDTD143ET-QR

Overview

The PDTD143ET-QR is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates a single transistor with built-in bias resistors R1 and R2, both specified at 4.7 kΩ. The device operates in a SOT23 surface-mount package with a collector-emitter voltage (VCEO) of 50 V and a maximum output current (IO) of 500 mA. Key electrical characteristics include a DC current gain (hFE) of 60 at 50 mA, a transition frequency (fT) of 225 MHz, and a total power dissipation of 320 mW. The component is qualified to AEC-Q101 standards for automotive applications.

Feature Summary

  • Built-in bias resistors simplify circuit design and reduce component count
  • Qualified according to AEC-Q101 for automotive applications
  • High temperature capability up to 175 °C junction temperature

Applications

  • IC inputs control
  • Switching loads
  • Cost-saving alternative to BC807 series transistors in digital applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel size or tape specifications. Confirm that the requested part number matches the exact resistor values and package type required for the design. Ensure compliance with RoHS directives and check for any recent product change notices affecting assembly sites or materials before finalizing procurement orders.

Selection Notes

Select this component when a compact NPN switching solution with integrated base biasing is required. The 4.7 kΩ internal resistors are suitable for standard logic interface levels. Consider the 500 mA current rating and 50 V breakdown voltage for load driving tasks. Verify thermal management requirements based on the 320 mW power dissipation limit and the specific PCB copper layer configuration used in the application.

Part Context

This device belongs to the PDTD143ET family of NPN resistor-equipped transistors from Nexperia. It serves as the NPN counterpart to the PDTB143ET-Q PNP variant. The 'QR' suffix typically denotes a specific tape and reel packaging format for automated surface-mount assembly, distinct from cut-tape or tray options.

Replacement Considerations

Direct functional substitutes within the same family include the PDTB143ET-Q (PNP complement). For generic replacements, verify pinout compatibility and ensure equivalent VCEO, IO, and resistor values (R1/R2 = 4.7 kΩ) are maintained. Cross-reference with other manufacturers' RETs only if electrical parameters and package dimensions match exactly.

PDTD143ET-QRPDTD143ET-QR
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