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The PDTD143ETR is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. in a SOT23 surface-mount package. It features built-in bias resistors R1 and R2, both nominally 4.7 kΩ with a ±10% ratio tolerance. The device supports a maximum collector-emitter voltage of 50 V and an output current of 500 mA. Key electrical characteristics include a DC current gain (hFE) of at least 60 at 50 mA, a transition frequency of 225 MHz, and a total power dissipation of 320 mW at 25 °C. It operates within a junction temperature range up to 175 °C.
Verify the specific suffix 'ETR' against the manufacturer's official ordering information to confirm tape-and-reel packaging details. Confirm that the non-automotive qualification status aligns with the target application requirements, as automotive-grade alternatives are available separately.
Select this component when a compact NPN switching solution with integrated base biasing is required. Ensure the 50 V collector-emitter voltage and 500 mA current ratings exceed the maximum load conditions. Verify that the SOT23 package dimensions fit the PCB footprint constraints.
This part belongs to the PDTD1XXXT_SER family of NPN resistor-equipped transistors. It serves as the complement to the PDTB143ET PNP variant. The product data sheet was revised on October 13, 2022, transitioning from a family document to a single-type specification.
The PDTB143ET is the PNP complement. For automotive applications, consult Nexperia for qualified (-Q) product alternatives, as this specific part is not automotive qualified.
No, the product data sheet explicitly states that this product is not suitable for automotive use and is not qualified according to automotive testing requirements.
Both bias resistors, R1 (input) and R2, have a nominal value of 4.7 kΩ with a specified ratio tolerance of ±10%.
The maximum junction temperature (Tj) is 175 °C.