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The PDTD143EUF is an NPN Resistor-Equipped Transistor (RET) from the PDTD1xxxU series, manufactured by Nexperia USA Inc. It integrates a transistor with built-in bias resistors in a SOT323 (SC-70) surface-mounted package. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V and a maximum output current (IO) of 500 mA. The device features a typical transition frequency (fT) of 225 MHz and a DC current gain (hFE) of at least 60 at 50 mA. Internal resistors are specified as R1 = 4.7 kΩ and R2 = 4.7 kΩ, with a ±10% tolerance on the resistor ratio. Total power dissipation reaches 300 mW in free air and 425 mW on a standard FR4 PCB.
Verify the specific suffix 'EU' against the manufacturer's ordering information to confirm the exact resistor values and marking code. Ensure the procurement source provides documentation confirming AEC-Q101 qualification status if required for automotive compliance. Cross-reference the SOT323 footprint dimensions during layout finalization.
Select this component when a compact NPN switching solution with integrated base biasing is required. The 4.7 kΩ input resistor value suits general-purpose logic interface applications. Consider the 50 V rating and 500 mA current capability for low-power load switching tasks where space constraints favor the SC-70 package over larger alternatives.
This part belongs to the PDTD1xxxU series of NPN resistor-equipped transistors. It shares the same package and general characteristics as variants like PDTD113EU and PDTD123EU, distinguished primarily by the internal resistor network values. The series is designed to replace multiple discrete components in digital logic circuits.
Direct pin-compatible replacements within the same family include PDTD143XU, which differs only in the R2 resistor value (10 kΩ vs 4.7 kΩ). For applications requiring different bias ratios, other members of the PDTD1xxxU series should be evaluated based on their specific R1 and R2 specifications.
For the PDTD143EUF, the input bias resistor (R1) is 4.7 kΩ and the base-emitter bias resistor (R2) is also 4.7 kΩ.
Yes, the PDTD1xxxU series has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101.
The maximum junction temperature (Tj) for this device is 175 °C.