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The PDTD143XQAZ is an NPN Resistor-Equipped Transistor (RET) in a DFN1010D-3 package. It features a collector-emitter voltage of 50 V and output current capability of 500 mA. The built-in bias resistors are R1 = 4.7 kΩ and R2 = 10 kΩ, with a ratio tolerance of ±10%. Key electrical characteristics include a DC current gain (hFE) minimum of 70 at 50 mA/5 V, saturation voltage of 100 mV max at 50 mA/2.5 mA, and transition frequency of 210 MHz typical. Total power dissipation is 325 mW at 25°C ambient.
Verify the specific suffix 'QAZ' against the official Nexperia ordering information to confirm the DFN1010D-3 package variant. Ensure compatibility with AEC-Q101 automotive qualification requirements if used in vehicle systems. Confirm RoHS compliance status for the specific manufacturing batch before integration into final assemblies.
Select this RET when a compact NPN switching solution with integrated base resistance is required. The 4.7 kΩ input resistor suits moderate drive currents. Compare thermal resistance values against PCB copper area constraints. Verify that the 50 V rating exceeds peak circuit voltages including transients.
This component belongs to the PDTD113Z/123Y/143XQA series of 50 V, 500 mA NPN resistor-equipped transistors. It serves as the digital transistor equivalent to discrete BJT configurations, offering a cost-saving alternative for standard logic interface circuits while maintaining high reliability standards for industrial and consumer electronics.
Public confirmed substitute part numbers: PDTB143XQA (PNP complement). Other series members like PDTD113ZQA or PDTD123YQA share the same package but differ in resistor values.