ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic：100mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：225 MHz
- Power - Max：320 mW
- Grade：Automotive
- Qualification：AEC-Q100
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236AB
Download product information
Overview
The PDTD143XTR is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. in a SOT23 (TO-236AB) surface-mount package. It features built-in bias resistors with R1 at 4.7 kΩ and R2 at 10 kΩ, providing a ratio tolerance of ±10%. The device supports a maximum collector-emitter voltage of 50 V and an output current of 500 mA. Key electrical characteristics include a DC current gain (hFE) of 70 minimum at 50 mA, a transition frequency of 225 MHz, and a total power dissipation of 320 mW. It is qualified to AEC-Q101 standards for automotive applications.
Feature Summary
- Built-in bias resistors simplify circuit design and reduce component count
- Qualified for high temperature applications up to 175 °C junction temperature
- AEC-Q101 qualified for automotive electronics reliability
Applications
- IC inputs control
- Cost-saving alternative to BC807 series transistors in digital applications
- Switching loads
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type and reel specifications. Confirm that the delivered components match the required marking codes and manufacturing site identifiers. Ensure compliance with RoHS3 directives and check for any recent Product Change Notifications regarding assembly sites or material updates before finalizing procurement orders.
Selection Notes
Select this component when a compact NPN switching solution with integrated base biasing is required. The fixed resistor values eliminate external bias network calculations. Verify that the 50 V breakdown voltage and 500 mA current rating meet the application load requirements. Consider the thermal resistance characteristics if operating near the 175 °C junction temperature limit.
Part Context
This part belongs to the PDTD1XXXT_SER family of NPN resistor-equipped transistors. It serves as the NPN complement to the PDTB143XT PNP variant. The device integrates discrete transistor functionality with passive biasing elements into a single small outline plastic package, optimizing board space for digital logic interfacing.
Replacement Considerations
Direct functional substitutes within the same package and specification include other PDTD143XT variants from Nexperia. Cross-manufacturer replacements must be verified for pin compatibility, resistor ratios, and voltage ratings.
FAQ
What are the internal resistor values?
The internal bias resistor R1 is 4.7 kΩ and R2 is 10 kΩ.
Is this component suitable for automotive use?
Yes, it is qualified according to the AEC-Q101 standard for discrete semiconductors.
What is the maximum junction temperature?
The maximum junction temperature is 175 °C.
