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The Infineon Technologies PED3264HV1.4 is a high-voltage power MOSFET belonging to the OptiMOS™ 5 product family. It features an N-channel enhancement mode structure designed for robust performance in demanding power conversion applications. The device is characterized by a drain-source voltage rating of 650 V and a continuous drain current capability optimized for efficient switching. Packaged in a thermally enhanced D²PAK-7 (TO-263-7L) surface-mount housing, it facilitates effective heat dissipation. Key electrical parameters include a low on-state resistance and controlled gate charge characteristics, ensuring minimal conduction and switching losses during operation.
Verify the specific ordering suffix against the official datasheet to confirm exact pin configuration and packaging variant. Confirm RoHS compliance status and automotive qualification requirements if applicable to the target environment. Ensure the supplier provides valid traceability documentation for critical industrial or safety-related deployments.
Select this component when a 650 V rating is required with moderate current demands in space-constrained designs. Evaluate the thermal resistance of the D²PAK-7 package against the expected power dissipation. Compare gate charge specifications against the driving circuit capabilities to ensure adequate switching speed without excessive drive current requirements.
This part belongs to Infineon's OptiMOS™ 5 portfolio, which targets cost-sensitive yet high-performance power switching needs. It serves as a bridge between standard discrete transistors and more complex integrated modules. The family emphasizes reliability and ease of integration into existing PCB layouts common in consumer and industrial electronics manufacturing.
Direct replacements must match the 650 V / ~30 A specification and D²PAK-7 footprint. Verify that alternative devices offer comparable Rds(on) and thermal resistance. Check for identical pinout compatibility to avoid PCB redesigns during substitution.