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The PEMZ7,115 is a dual NPN/PNP general-purpose transistor manufactured by Nexperia. It utilizes the SOT-666 surface-mount package with dimensions of 1.6 x 1.2 mm and a height of 1.0 mm. The device features a total power dissipation of 300 mW and operates within a temperature range of -55 °C to +150 °C. Key electrical characteristics include low collector-emitter saturation voltage (VCEsat) and high current capabilities. The component is designed for battery-powered applications to optimize power efficiency.
Verify the production status before procurement as this component may be classified as Not Recommended for New Designs. Confirm the specific datasheet version matches the required electrical parameters. Ensure the SOT-666 footprint compatibility with existing PCB layouts. Check for any RoHS compliance documentation if required by local regulations.
Select this component when space constraints require an ultra-thin package with a 1.6 x 1.2 mm footprint. Consider its low VCEsat for applications involving low supply voltages where minimizing voltage drop is critical. Evaluate the 300 mW power dissipation limit against the expected thermal load in the target circuit design.
This part belongs to Nexperia's family of general-purpose double transistors. It combines NPN and PNP structures in a single compact package. The SOT-666 package offers self-alignment during soldering due to straight leads, which aids in automated pick-and-place manufacturing processes.