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The PF5103 is an N-Channel analog switch sourced from Process 51 technology, designed for low-level signal handling in sample and hold circuits and chopper-stabilized amplifiers. It operates within a Drain-Gate voltage of 40 V and Gate-Source voltage of -40 V. The device features a Gate-Source cutoff voltage range of -1.2 V to -2.7 V at 1.0 nA drain current. Electrical characteristics include a maximum gate reverse current of 500 nA at 125°C and input capacitance of 16 pF at 1.0 MHz. Thermal resistance junction-to-ambient is 357 °C/W, with total device dissipation rated at 625 mW.
Verify the component origin, as the datasheet identifies Fairchild Semiconductor as the manufacturer while the brand is listed as onsemi. Confirm that the TO-92 package marking matches the specified 'PF5103' identifier. Ensure the revision level corresponds to Rev. A specifications regarding absolute maximum ratings and thermal characteristics before integration into designs requiring strict adherence to original Fairchild parameters.
Select this component when designing circuits requiring an N-Channel analog switch compatible with Process 51 technology. Consider the specific Gate-Source cutoff voltage limits (-1.2 V to -2.7 V) to ensure proper biasing for low-current applications. Evaluate the thermal resistance of 357 °C/W against the available board space and ambient temperature conditions to maintain operation within the 150°C junction temperature limit.
The PF5103 belongs to the family of single N-Channel analog switches manufactured by Fairchild Semiconductor, now part of onsemi. It is distinct from power MOSFETs due to its focus on small-signal characteristics rather than high-current conduction. The device is housed in a TO-92 package, differentiating it from surface-mount alternatives like SOT-23 found in other product lines.
Public confirmed substitute part numbers are not provided in the source documentation. Verify compatibility with existing circuit biasing requirements if considering alternative Process 51 derived switches.
The maximum operating and storage junction temperature is 150°C.
The Gate-Source Cutoff Voltage (VGS(off)) ranges from -1.2 V to -2.7 V under test conditions of VDS = 15V and ID = 1.0nA.
The Input Capacitance (Ciss) is 16 pF, measured at VDG = 15V, VGS = 0V, and f = 1.0MHz.