PH1090-550S

$597.33

Description：RF TRANS NPN 80V
Series：-

SKU:f6e9b8877da2 Category: Bipolar RF Transistors Brand: MACOM Technology Solutions

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 80V
Series：-
Mfr：MACOM Technology Solutions
Package：Tray
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：80V
Frequency - Transition：-
Noise Figure (dB Typ @ f)：-
Gain：8.06dB
Power - Max：550W
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Current - Collector (Ic) (Max)：28A
Operating Temperature：200°C (TJ)
Mounting Type：Chassis Mount
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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PH1090-550S

Overview

The PH1090-550S is an NPN silicon microwave power transistor designed for avionics pulsed power applications. Operating at a frequency of 1090 MHz, it delivers 350W output power with a 250µs pulse width and 10% duty cycle. Key electrical specifications include a collector-emitter breakdown voltage (BV_CES) of 80V, a peak collector current of 17A, and a maximum power dissipation of 875W. The device features internal input and output impedance matching, achieving a typical power gain of 8.32 dB and collector efficiency of 61.0% under standard test conditions.

Feature Summary

Common base configuration optimized for broadband Class C operation
High efficiency inter-digitized geometry with diffused emitter ballasting resistors
Internal input and output impedance matching for simplified integration
Hermetic metal/ceramic package construction

Applications

Avionics pulsed power systems
Radar transmitter modules
Broadband RF power amplification

Procurement Notes

Verify the specific suffix 'S' against official MACOM documentation to confirm mechanical or electrical variations compared to the standard 'L' variant. Ensure compatibility with existing thermal management solutions, as the device requires a thermal resistance of 0.2°C/W. Confirm RoHS compliance status for the specific ordering code before finalizing procurement plans.

Selection Notes

Select this component for high-power avionics applications requiring stable performance at 1090 MHz. Consider the 80V collector-emitter voltage rating and 17A peak current limits when designing bias circuits. The internal impedance matching simplifies design but requires adherence to the specified load mismatch tolerances to ensure stability.

Part Context

This part belongs to the PH1090 series of NPN silicon microwave power transistors manufactured by MACOM Technology Solutions. The series is characterized by its use in demanding pulsed power environments, leveraging gold metallization and hermetic packaging to maintain reliability in aerospace and defense contexts.