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The MACOM PH1214-25M is a silicon RF bipolar transistor designed for high-power applications in the 2.3 to 2.7 GHz frequency range. It delivers a saturated output power of 25 watts (44 dBm) with a typical gain of 16 dB at this operating point. The device operates on a drain voltage of 28 volts and requires a bias current of approximately 5 amperes to achieve rated performance. Packaged in a ceramic flange configuration, it supports robust thermal management for demanding environments.
Verify component authenticity through authorized channels or official manufacturer documentation. Confirm that the specific part number matches the required electrical specifications and package type before integration into designs. Ensure compliance with relevant environmental standards such as RoHS if applicable to the end application.
Select this component when a silicon-based solution is preferred for cost-effective high-power amplification in the L-band spectrum. Evaluate thermal resistance requirements carefully due to the 25-watt output capability. Consider the 28-volt supply constraint and ensure the driving circuit can provide sufficient input power to achieve the specified gain.
This model belongs to MACOM's extensive portfolio of silicon bipolar transistors engineered for DC to several gigahertz operations. These components are characterized by their use of full gold metallization processes, which enhance long-term reliability for both terrestrial and space-based applications across various electronic systems.
Publicly confirmed substitute part numbers for the PH1214-25M were not identified in available documentation. Engineers should consult official MACOM resources or authorized distributors to verify potential cross-references or updated equivalents.