PH2729-130M

PH2729-130M

$522.37
  • Description:RF TRANS NPN 63V
  • Series:-

SKU:e0d3b97febc5 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 63V
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):63V
  • Frequency - Transition:-
  • Noise Figure (dB Typ @ f):-
  • Gain:9.73dB ~ 8.85dB
  • Power - Max:130W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Current - Collector (Ic) (Max):12.5A
  • Operating Temperature:200°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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PH2729-130M

Overview

The PH2729-130M is an NPN silicon microwave power transistor designed for radar pulsed power applications. It operates in the S-band from 2.7 to 2.9 GHz with a rated output power of 130 W under 100 µs pulse and 10% duty cycle conditions. The device utilizes a common base configuration and features internal input and output impedance matching. Key electrical specifications include a collector-emitter breakdown voltage (BVCES) of 63 V, a maximum peak collector current of 12.5 A, and a thermal resistance (RTH(JC)) of 0.3 °C/W. It achieves a typical power gain of approximately 9 dB and a collector efficiency exceeding 40% at full output.

Feature Summary

  • Broadband Class C operation capability
  • High efficiency inter-digitized geometry
  • Diffused emitter ballasting resistors
  • Internal input and output impedance matching

Applications

  • Radar pulsed power systems
  • S-band microwave transmitter modules
  • Military communication equipment

Procurement Notes

Verify component authenticity through authorized MACOM channels or certified distributors. Confirm RoHS compliance status and hermetic seal integrity upon receipt. Ensure storage temperature remains within -65 to +200 °C to maintain junction reliability. Review the latest datasheet revision for any updates to absolute maximum ratings or test conditions prior to final procurement.

Selection Notes

Select this component for high-power S-band radar applications requiring robust pulsed performance. The common base configuration simplifies drive circuitry design by eliminating the need for external biasing networks typically required in common emitter setups. Verify that the system can accommodate the specified 100 µs pulse width and 10% duty cycle constraints to prevent thermal overload.

Part Context

This part belongs to MACOM's portfolio of NPN silicon microwave power transistors optimized for defense and aerospace markets. It shares architectural similarities with other devices in the PH series but is distinctively tuned for the 2.7–2.9 GHz frequency range. The hermetic metal/ceramic package ensures reliability in harsh environmental conditions compared to standard plastic-packaged alternatives.

Replacement Considerations

Direct replacements are not explicitly listed in public documentation. Evaluate alternative MACOM models within the same family based on matching frequency bands, output power levels, and package dimensions. Ensure any substitute maintains compatibility with the existing common base topology and impedance matching requirements.

PH2729-130MPH2729-130M
$522.37
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