PH3230S,115

$1.94

Description：MOSFET N-CH 30V 100A LFPAK
Series：-
Mfr：Nexperia USA Inc.
Package：Cut Tape (CT)

SKU:19901796ab18 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

PH3230S,115 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 30V 100A LFPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PH3230S,115

Description：MOSFET N-CH 30V 100A LFPAK
Series：-
Mfr：Nexperia USA Inc.
Package：Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：3.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：42 nC @ 5 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：4100 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

Single FETs, MOSFETs datasheet and documents for PH3230S,115

PH3230S,115

Single FETs, MOSFETs Overview

The PH3230S is an N-channel TrenchMOS intermediate level Field-Effect Transistor (FET) housed in a plastic LFPAK (SOT669) package. It features a drain-source voltage rating of 30 V and a continuous drain current capability of 100 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 3.2 mΩ at VGS = 10 V and 56.5 mΩ at VGS = 4.5 V, both measured at ID = 25 A and Tj = 25 °C. Total power dissipation reaches 62.5 W under specified thermal conditions.

Single FETs, MOSFETs Feature Summary

Low conduction losses resulting from low on-state resistance
Space-saving design due to small footprint
Simple gate drive requirements enabled by low gate charge
Compatibility with logic level gate drive sources

Single FETs, MOSFETs Applications

Computer motherboards
DC-to-DC converters
Notebook computers
Switched-mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package variant against the manufacturer's current catalog before procurement. Confirm that the component status remains active for production use, as datasheet revisions may impact availability or specifications. Ensure compliance with export control regulations if applicable to your region. Cross-reference the pinning configuration with your PCB layout to guarantee correct source, gate, and drain connections.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling within a compact surface-mount form factor. Evaluate the thermal resistance characteristics to ensure adequate heat sinking for the intended power dissipation levels. Consider the gate charge parameters when designing drive circuits to optimize switching speeds and minimize driver losses. Verify that the operating voltage and current limits remain within the safe operating area defined in the datasheet.

Single FETs, MOSFETs Part Context

This N-channel enhancement mode FET utilizes TrenchMOS technology to achieve efficient performance in computing and communications equipment. Designed for industrial and consumer applications, it offers robust avalanche ruggedness with specified repetitive and non-repetitive energy ratings. The device integrates a source-drain diode with defined reverse recovery characteristics, supporting its use in synchronous rectification and inductive load switching scenarios.