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PHP29N08T,127 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is NEXPERIA PHP29N08T - 27A, 75V, 0. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for PHP29N08T,127
- Description：NEXPERIA PHP29N08T - 27A, 75V, 0
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：11V
- Rds On (Max) @ Id, Vgs：50mOhm @ 14A, 11V
- Vgs(th) (Max) @ Id：5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs：19 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：810 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：88W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for PHP29N08T,127
Single FETs, MOSFETs Overview
The Nexperia PHP29N08T is an N-channel TrenchMOS standard level enhancement mode Field-Effect Transistor housed in a TO-220AB (SOT78) plastic package. It features a drain-source voltage of 75 V and a continuous drain current of 27 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, specified as 50 mΩ maximum at 25 °C junction temperature with 11 V gate drive. Total power dissipation reaches 88 W under standard thermal conditions.
Single FETs, MOSFETs Feature Summary
- High noise immunity resulting from elevated gate threshold voltage levels
- Reduced conduction losses facilitated by low on-state resistance characteristics
Single FETs, MOSFETs Applications
- Industrial motor control systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix to confirm package variant and tape/reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or Nexperia sales offices prior to finalizing procurement plans. Ensure storage and handling procedures align with moisture sensitivity classifications defined in the product data sheet.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring robust N-channel switching capabilities within a through-hole TO-220AB footprint. Evaluate thermal management requirements against the 88 W total power dissipation limit and junction-to-mounting base thermal resistance. Ensure gate drive voltages remain within the specified 30 V absolute maximum rating to prevent dielectric breakdown.
Single FETs, MOSFETs Part Context
This device belongs to the Nexperia TrenchMOS family, utilizing trench gate technology to optimize performance metrics such as on-resistance and switching speed. The TO-220AB package provides a dedicated mounting base connected to the drain terminal, facilitating efficient heat transfer to external heatsinks for high-power industrial applications.
Single FETs, MOSFETs Replacement Considerations
Consult official Nexperia documentation for verified cross-reference part numbers. Do not substitute based solely on pinout compatibility without verifying electrical parameters and thermal characteristics.
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