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The PHPT610035NK-QX is a dual PNP bipolar junction transistor array manufactured by Nexperia USA Inc. It is housed in an LFPAK56D (SOT-1205) surface-mount package with six terminals. The device features a maximum collector-emitter voltage (VCEO) of 100 V and a maximum collector-base voltage (VCBO) of 100 V. It supports a continuous DC collector current (IDC) of 3 A per transistor. The component has a maximum power dissipation (PD) of 1.25 W at 25°C ambient temperature. The minimum DC current gain (hFE) is specified as 150 at a collector current of 500 mA and VCE of 10 V. The transition frequency (fT) is 125 MHz, and the operating junction temperature range extends up to 175°C.
Verify the specific suffix NK-QX against official Nexperia documentation to confirm automotive grade status and exact packaging configuration. Ensure compatibility with LFPAK56D footprint requirements during PCB layout. Confirm RoHS3 compliance and moisture sensitivity level prior to assembly planning.
Select this component when dual matched PNP arrays are required for high-current switching applications. The 100 V rating suits medium-voltage industrial and automotive environments. Consider the 1.25 W power dissipation limit and thermal resistance characteristics for heat sink design. Verify that the 3 A current capability meets the load requirements without exceeding safe operating area limits.
This part belongs to the Nexperia PHPT6100 series of double-bipolar transistors. These devices are designed for high-power applications requiring matched pairs in compact packages. The LFPAK56D variant offers improved thermal performance compared to traditional DPAK packages, making it suitable for space-constrained high-density designs.
Publicly confirmed substitute part numbers for PHPT610035NK-QX were not identified in available documentation. Verify pinout and electrical parameters carefully if considering alternative manufacturers or different package variants within the same family.