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The Nexperia PHPT610035NK is an NPN/NPN high power double bipolar junction transistor housed in a SOT1205 (LFPAK56D) surface-mounted package. It features matched current gain with a ratio of 0.95 to 1.05 at VCE = 2 V and IC = 1 A. Each transistor supports a collector-base voltage (VCBO) and collector-emitter voltage (VCEO) of 100 V, with a maximum continuous collector current (IC) of 3 A. The device operates up to a junction temperature of 175 °C and offers low saturation resistance of 110 mΩ max at IC = 3 A.
Verify the specific ordering suffix and packaging configuration directly with authorized distributors or Nexperia sales offices before placing orders. Confirm that the non-automotive qualification status aligns with your project requirements, as automotive alternatives are available separately. Ensure compliance with RoHS directives and export control regulations applicable to your region.
Select this component when matched NPN characteristics are required for balanced circuit performance. Consider the LFPAK56D package for space-constrained designs needing high thermal efficiency. Evaluate the 175 °C junction temperature rating against your system's thermal environment. Verify that the 100 V voltage ratings exceed your peak operating conditions to ensure reliability.
This part belongs to the PHPT610035 series of high-power double bipolar transistors. It serves as the NPN/NPN variant within a portfolio that includes PNP/PNP and complementary NPN/PNP options. The series utilizes clip-bonded FlatPower technology for enhanced mechanical ruggedness and thermal conductivity compared to wire-bonded equivalents.
PHPT610030NK is the matched version referenced in the datasheet. For PNP/PNP configurations, consider PHPT610035PK. For NPN/PNP complementary pairs, use PHPT610035NPK. Automotive-qualified versions require checking the -Q suffix variants on the manufacturer website.