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PHT6NQ10T,135 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 100V 3A SOT223. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for PHT6NQ10T,135
- Description：MOSFET N-CH 100V 3A SOT223
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：90mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：633 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta), 8.3W (Tc)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for PHT6NQ10T,135
Single FETs, MOSFETs Overview
The PHT6NQ10T,135 is an N-channel enhancement mode field-effect transistor utilizing TrenchMOS technology. It features a drain-source voltage (VDSS) of 100 V and a continuous drain current (ID) of 6.5 A at a solder point temperature of 25 °C. The device exhibits a maximum on-state resistance (RDS(ON)) of 90 mΩ at VGS = 10 V and ID = 3 A. Total gate charge (Qg) is typically 21 nC. Thermal resistance from junction to surface-mounted solder point is 12 K/W typical. The component operates within a junction temperature range of -65 °C to 150 °C.
Single FETs, MOSFETs Feature Summary
- Utilizes TrenchMOS technology for low conduction losses and fast switching characteristics
- Features low thermal resistance suitable for efficient heat dissipation
- Designed for high-frequency applications due to rapid switching performance
Single FETs, MOSFETs Applications
- Motor drivers
- Relay drivers
- DC-to-DC converters
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm package type and reel specifications. Ensure that the requested component matches the exact part number provided in the datasheet. Confirm compliance with relevant environmental standards before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for circuits requiring robust N-channel switching capabilities with moderate voltage ratings. Consider the thermal management requirements based on the specified power dissipation limits. Evaluate the gate charge parameters for compatibility with available drive circuitry.
Single FETs, MOSFETs Part Context
This component belongs to the PHT6NQ10T series of N-channel TrenchMOS transistors manufactured by Nexperia USA Inc. It is housed in a SOT223 surface-mount package designed for effective heat transfer through the collector pad.
Single FETs, MOSFETs Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Do not assume cross-compatibility without verifying electrical parameters and pin configurations.
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