PIMH9-QX

Overview

The PIMH9-QX is a dual NPN resistor-equipped transistor (RET) from Nexperia, housed in a SOT-363 (SC-88) surface-mount package with six pins. It features a maximum collector-emitter voltage (VCEO) of 50 V and a collector-base voltage (VCBO) of 50 V. The device supports a maximum DC collector current (Idc) of 100 mA and has a minimum DC current gain (hFE) of 100 at 5 mA and 5 V. Internal biasing resistors are configured with R1 = 10 kOhm and R2 = 47 kOhm. Power dissipation is rated at 200 mW, operating within a temperature range of -55°C to +150°C. It meets AEC-Q101 automotive qualification standards.

Feature Summary

• Dual NPN configuration with integrated base and emitter resistors for simplified circuit design
• Automotive-grade reliability certified under AEC-Q101 standards
• Compact SOT-363 surface-mount package optimized for high-density PCB layouts

Applications

• Automotive digital logic interfacing and signal switching
• General-purpose switching applications in industrial control systems
• Level shifting and buffer circuits in telecommunications infrastructure

Procurement Notes

Verify the specific suffix 'QX' against official Nexperia documentation to confirm tape-and-reel packaging specifications and quantity per reel. Ensure compliance with RoHS directives and REACH regulations as stated in the product datasheet. Confirm that the AEC-Q101 qualification status remains valid for the intended automotive application environment.

Selection Notes

Select this component when a dual NPN switch with fixed biasing is required in space-constrained designs. The integrated resistors eliminate external components, reducing board area and assembly costs. Verify that the 50 V voltage rating and 100 mA current capacity meet the load requirements. Consider the thermal performance given the 200 mW power dissipation limit in the small SOT-363 package.

Part Context

The PIMH9-Q belongs to Nexperia's family of Resistor-Equipped Transistors (RETs), designed to replace multiple discrete components. The PIMH9 variant specifically provides two NPN transistors with biasing resistors. This series offers a compact alternative to discrete BJT arrays, simplifying schematic design and improving reliability by reducing solder joints in high-volume manufacturing environments.

Replacement Considerations

Publicly confirmed direct substitutes include the PUMD9-Q (NPN/PNP complement) and PUMB9-Q (PNP/PNP complement). Verify pin compatibility and electrical parameters before substitution. No other specific cross-model replacements are documented in the provided source material.