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PJD30N15S-AU_L2_006A1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is 150V N-CHANNEL ENHANCEMENT MODE. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for PJD30N15S-AU_L2_006A1
- Description：150V N-CHANNEL ENHANCEMENT MODE
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for PJD30N15S-AU_L2_006A1
Single FETs, MOSFETs Overview
The PJD30N15S-AU is a 150V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It features a TO-252AA package and supports a continuous drain current of 26A at 25°C case temperature. The device exhibits a maximum on-resistance (RDS(on)) of 49mΩ at VGS=10V and ID=10A, or 54mΩ at VGS=7V and ID=6A. Key electrical parameters include a gate threshold voltage of 2V to 4V, total gate charge of 22nA typical, and a power dissipation rating of 83W at 25°C. It operates within a junction temperature range of -55°C to +175°C.
Single FETs, MOSFETs Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- Standard level drive capability with optimized gate threshold
- Lead-free construction compliant with EU RoHS 2.0 directives
- Green molding compound formulation adhering to IEC 61249 standards
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Motor control applications
- Power management systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive-grade designs. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values provided in the datasheet.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring low on-resistance at standard logic gate drive voltages. Consider the TO-252AA package dimensions for PCB layout compatibility. Evaluate the thermal performance based on the specific ambient temperature conditions and mounting pad copper area available in the target design.
Single FETs, MOSFETs Part Context
This part belongs to Panjit's N-Channel Enhancement Mode MOSFET lineup designed for general-purpose switching applications. The device utilizes silicon technology to provide robust performance in power conversion environments. It is engineered to balance conduction losses with switching efficiency through optimized cell architecture.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Cross-reference pinout configurations and thermal characteristics when considering alternative components from other manufacturers.
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