PJD50P04-AU_L2_000A1

Single FETs, MOSFETs Overview

The PJD50P04-AU is a 40V P-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. in a TO-252AA package. It features a maximum continuous drain current of -50A at TC=25°C and -9A at TA=25°C, with a pulsed drain current capability of -166A. The device achieves an on-state resistance (RDS(on)) of 12mΩ max at VGS=-10V/ID=-10A and 17.5mΩ max at VGS=-4.5V/ID=-8A. Electrical characteristics include a gate threshold voltage range of -1V to -2.5V, total gate charge of 23nC, and input capacitance of 2767pF. Thermal performance specifies a junction-to-case resistance of 2°C/W and a power dissipation of 75W at TC=25°C.

Single FETs, MOSFETs Feature Summary

• AEC-Q101 qualified for automotive-grade reliability
• High switching speed with low gate charge and reverse transfer capacitance
• Improved dv/dt capability for robust operation
• Lead-free construction compliant with EU RoHS 2.0 standards

Single FETs, MOSFETs Applications

• Automotive power management systems
• DC-DC converter topologies
• Motor control circuits
• Load switch applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive use. Ensure thermal design accounts for the specified junction-to-case resistance values under actual operating conditions. Cross-reference datasheet revision dates to ensure compatibility with existing design documentation.

Single FETs, MOSFETs Selection Notes

Select this component when a 40V P-Channel MOSFET with high current handling is required. The low RDS(on) values support efficient power conversion in DC-DC converters. Verify that the TO-252AA package fits the PCB layout constraints. Consider the -55°C to +175°C operating temperature range for harsh environments. Evaluate the gate charge specifications against driver capabilities for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the PJD50 series of P-Channel MOSFETs from Panjit International Inc. The series focuses on automotive-grade discrete semiconductors utilizing Shielded-Gate Trench Technology. These devices are designed to provide excellent figure-of-merit with low on-resistance for power supply and motor control applications.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.