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PJQ2410_R1_00001 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is DFN2020B-6L, MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for PJQ2410_R1_00001
- Description：DFN2020B-6L, MOSFET
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.1 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：660 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DFN2020B-6
- Package / Case：6-WDFN Exposed Pad
Single FETs, MOSFETs datasheet and documents for PJQ2410_R1_00001
Single FETs, MOSFETs Overview
The PJQ2410_R1_00001 is a silicon N-channel enhancement mode MOSFET manufactured by Panjit International Inc. It features a 30 V drain-source breakdown voltage and supports a continuous drain current of 10 A. The device exhibits a low on-resistance of 12 mΩ at 10 V gate drive, with a gate threshold voltage of 2.5 V and a total gate charge of 7.1 nC. Designed for surface-mount applications in the SMA-2 package, it operates within a temperature range of -55°C to +150°C junction temperature.
Single FETs, MOSFETs Feature Summary
- N-channel enhancement mode construction utilizing silicon technology
- Low on-resistance characteristic for efficient power switching
- High continuous current capability suitable for load management
- Surface-mount design optimized for automated assembly processes
Single FETs, MOSFETs Applications
- DC-DC converter output stages
- Load switch circuits
- Power management modules
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized Panjit distributors or official manufacturer channels. Confirm RoHS compliance status via the latest datasheet. Check for product change notifications regarding manufacturing updates. Ensure storage conditions meet moisture sensitivity level requirements before reflow soldering.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring moderate voltage blocking with high current handling in compact packages. Evaluate thermal dissipation capabilities given the 12 mΩ on-resistance at full load. Consider gate drive voltage compatibility with the 2.5 V threshold specification. Verify package footprint alignment with PCB layout constraints for the SMA-2 housing.
Single FETs, MOSFETs Part Context
This part belongs to Panjit's NFET-30FIMN series of medium-voltage MOSFETs. It represents a standard discrete semiconductor solution for general-purpose power switching applications. The device complements the manufacturer's broader portfolio of N-channel enhancement mode transistors designed for efficiency and reliability in consumer and industrial electronics.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Panjit technical support for qualified alternatives matching the 30 V, 10 A, SMA-2 specifications.
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