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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 9.5A 8DFN
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：9.5A (Ta), 40A (Tc)
- Rds On (Max) @ Id, Vgs：10.5mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1258pF @ 25V
- Power - Max：2W (Ta), 38.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：DFN5060B-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The PJQ5846-AU_R2_000A1 is a 40V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes DFN5060B-8L packaging and meets AEC-Q101 automotive qualification standards. The device supports a continuous drain current of 40A at TC=25°C and offers a maximum on-resistance (RDS(on)) of 10.5mΩ at VGS=10V, ID=8A. Key electrical parameters include a gate threshold voltage of 1.7V typical, total gate charge of 22nC, and input capacitance of 1258pF. Thermal characteristics specify a junction-to-case resistance of 3.9°C/W and an operating temperature range from -55°C to +175°C.
Feature Summary
- High switching speed with improved dv/dt capability
- Low reverse transfer capacitance for efficient operation
- Lead-free construction compliant with EU RoHS 2.0
- Green molding compound adhering to IEC 61249 standard
Applications
- Automotive power management systems
- DC-DC converter circuits
- Motor control applications
Procurement Notes
Verify the specific ordering suffix R2_000A1 against official documentation to confirm packing details. Confirm that the component meets required automotive reliability standards if deployed in vehicle electronics. Ensure thermal design accounts for the specified junction-to-case resistance values during high-current operation.
Selection Notes
Select this component when a low-voltage, high-current N-channel MOSFET is required for surface-mount assembly. The DFN5060B-8L package provides robust thermal performance suitable for power dissipation up to 38.5W at case temperature. Evaluate the 10.5mΩ on-resistance limit to ensure compatibility with system efficiency targets under load conditions.
Part Context
This part belongs to the PJQ series of enhancement mode MOSFETs produced by Panjit International Inc. The series focuses on low-voltage applications requiring high current handling capabilities. The AU suffix indicates compliance with environmental directives, while the R2 designation relates to the specific reel packaging configuration.
Replacement Considerations
Consult official datasheets for alternative parts offering identical 40V ratings and DFN5060B-8L footprints. Verify pinout compatibility and thermal resistance specifications before substitution. Ensure any replacement also holds AEC-Q101 qualification if used in automotive contexts.
