PJS6601-AU_S1_000A1

$0.63

Description：MOSFET N/P-CH 20V 4.1A SOT23-6
Series：-

SKU:a8441e121fff Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 4.1A SOT23-6
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：4.1A (Ta), 3.1A (Ta)
Rds On (Max) @ Id, Vgs：56mOhm @ 4.1A. 4.5V, 115mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.6nC @ 4.5V, 5.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：350pF @ 10V, 416pF @ 10V
Power - Max：1.25W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6
Supplier Device Package：SOT-23-6
Grade：Automotive
Qualification：AEC-Q101

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PJS6601-AU_S1_000A1

Overview

The PJS6601-AU is a complementary enhancement mode MOSFET pair manufactured by Panjit International Inc. The N-channel device provides a drain-source voltage of 20V and continuous current up to 4.1A, while the P-channel counterpart supports -20V and -3.1A. Both transistors utilize advanced trench process technology within an SOT-23 6L package. Key electrical parameters include a maximum on-resistance of 56mΩ for the N-channel at VGS=4.5V and 115mΩ for the P-channel at VGS=-4.5V. The components are qualified under AEC-Q101 standards and support operating junction temperatures from -55°C to +150°C.

Feature Summary

Complementary N-channel and P-channel configuration in a single compact package
Advanced trench process technology designed for load switching and PWM applications
Automotive-grade reliability with AEC-Q101 qualification
Lead-free construction compliant with EU RoHS 2.0 directives

Applications

Load switching circuits
Pulse Width Modulation (PWM) control systems
Battery-powered equipment power management
Low-voltage DC-DC converter stages

Procurement Notes

Verify the specific ordering suffix against official Panjit documentation to confirm exact packing configurations. Confirm that the required lot number tracking aligns with manufacturer policies for warranty claims. Ensure component authenticity through authorized distribution channels to maintain AEC-Q101 compliance integrity.

Selection Notes

Select this complementary pair when space-constrained designs require matched N-channel and P-channel switching capabilities. Evaluate the thermal resistance of 100°C/W against system dissipation requirements. Verify gate threshold voltages match the logic levels of the driving circuitry for reliable turn-on performance.

Part Context

This component belongs to Panjit's automotive-grade MOSFET portfolio, specifically engineered for high-reliability environments. It integrates both transistor types into one footprint to simplify PCB layout and reduce assembly complexity compared to discrete solutions.

Replacement Considerations

No public substitute part numbers are documented in the provided datasheet. Cross-reference pinouts and electrical limits carefully if considering alternative manufacturers.