PJS6801_S1_00001

Overview

The PJS6801_S1_00001 is a 30V P-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes advanced trench process technology and is housed in an SOT-23 6L package. Key electrical parameters include a drain-source voltage (VDS) of -30 V, continuous drain current (ID) of -3.2 A, and pulsed drain current (IDM) of -13 A. The device features a maximum on-state resistance (RDS(on)) of 74 mΩ at VGS=-10V and ID=-3.2A. Gate threshold voltage (VGS(th)) ranges from -0.5 V to -1.3 V. Total gate charge (Qg) is typically 15 nC. Power dissipation is rated at 1.25 W at 25°C ambient temperature, with an operating junction temperature range of -55°C to +150°C.

Feature Summary

• Advanced Trench Process Technology for optimized performance
• Specially designed for switch load and PWM applications
• Lead-free construction compliant with EU RoHS 2.0 directives
• Green molding compound meeting IEC 61249 standard

Applications

• Switch load circuits
• PWM application control

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official packing code table to ensure correct reel size and marking version. Confirm that the component meets Halogen-free requirements if specified for the target assembly. Cross-reference the datasheet revision date to ensure access to the most current electrical characteristics and thermal data before finalizing procurement specifications.

Selection Notes

Select this component for low-voltage P-channel switching tasks requiring moderate current handling within a compact surface-mount footprint. Evaluate the RDS(on) values across different gate drive voltages (-10V, -4.5V, -2.5V) to ensure compatibility with the system's logic levels. Consider the thermal resistance and power dissipation limits when designing heat management strategies for high-duty cycle operations.

Part Context

This part belongs to Panjit's lineup of 30V P-Channel Enhancement Mode MOSFETs. It shares the core trench technology architecture with other devices in the series but is distinguished by its specific SOT-23 6L packaging configuration. The device is intended for general-purpose switching applications where space constraints and efficiency are primary design considerations.

Replacement Considerations

Direct substitutes must match the -30V VDS rating, P-channel polarity, and SOT-23 6L package dimensions. Verify that alternative components offer comparable RDS(on) values at the intended gate drive voltage and similar thermal characteristics to maintain circuit performance integrity.