PJS6812_S1_00001

$0.50

Description：MOSFET 2N-CH 20V 3.7A SOT23-6
Series：-

SKU:88e98e3e67c7 Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 3.7A SOT23-6
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：3.7A (Ta)
Rds On (Max) @ Id, Vgs：56mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.57nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：350pF @ 10V
Power - Max：1.25W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6
Supplier Device Package：SOT-23-6
Grade：-
Qualification：-

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PJS6812_S1_00001

Overview

The PJS6812_S1_00001 is a 20V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes advanced trench process technology and is housed in an SOT-23 6L package. The device supports a continuous drain current of 3.7A and a pulsed drain current of 14.8A. Key electrical parameters include a maximum on-resistance (RDS(on)) of 56mΩ at VGS=4.5V, 69mΩ at VGS=2.5V, and 98mΩ at VGS=1.8V. Total gate charge is typically 4.57nC. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Advanced Trench Process Technology for low on-resistance
Optimized for switch load and PWM applications
Lead-free construction compliant with EU RoHS 2.0 directive
Green molding compound meeting IEC 61249 standard

Applications

Switch load management circuits
Pulse Width Modulation (PWM) control systems
General-purpose power switching applications

Procurement Notes

Verify the specific ordering suffix against official Panjit documentation to confirm packaging details such as reel size or tape-and-reel specifications. Ensure compliance requirements match project standards, specifically regarding lead-free status and halogen-free green molding compounds. Cross-reference the marking code SE2 with physical component inspection upon receipt.

Selection Notes

Select this component when a 20V N-Channel MOSFET with low RDS(on) is required in an SOT-23 6L footprint. Evaluate thermal performance based on the 100°C/W junction-to-ambient resistance and derating curves above 25°C. Confirm that the 3.7A continuous current rating meets the circuit's steady-state requirements and that the 14.8A pulsed rating covers transient loads.

Part Context

This part belongs to the PJS6812 series of enhancement mode MOSFETs produced by Panjit International Inc. The manufacturer specializes in power semiconductors including MOSFETs, diodes, and transistors for automotive, industrial, and consumer electronics markets. The datasheet revision indicates updates to electrical characteristics and mechanical data over time.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings before considering alternative manufacturers' components.