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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 3.6A SOT23-6
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
- Rds On (Max) @ Id, Vgs：57mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：756pF @ 10V
- Power - Max：1.25W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：SOT-23-6
- Grade：-
- Qualification：-
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Overview
The PJS6815_S1_00001 is a P-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It operates with a drain-source voltage of -20 V and a continuous drain current of -3.6 A. The device utilizes advanced trench process technology to achieve low on-resistance, specified as less than 57 mΩ at VGS=-4.5V and ID=-3.6A. It is housed in an SOT-23 6L package and supports a maximum junction temperature of 150°C. The component is designed for switch load and PWM applications, featuring lead-free construction compliant with EU RoHS 2.0 directives.
Feature Summary
- Advanced Trench Process Technology
- Specially Designed for Switch Load and PWM Applications
- Lead-Free Construction Compliant with EU RoHS 2.0
- Green Molding Compound Per IEC 61249 Standard
Applications
- Switch Load Control
- PWM Application Circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm reel size and packaging quantity. Confirm that the marking version matches the required production specifications. Ensure compliance with environmental standards such as RoHS 2.0 and halogen-free requirements as stated in the datasheet. Always reference the latest manufacturer document for accurate part identification before procurement.
Selection Notes
Select this component based on the required -20 V drain-source voltage and -3.6 A continuous current capabilities. Evaluate the on-resistance values at specific gate-source voltages to ensure compatibility with the driving circuit logic levels. Consider the thermal resistance and power dissipation limits relative to the operating environment. Verify that the SOT-23 6L package fits the available PCB footprint constraints.
Part Context
This component belongs to the PJS6815 series of P-Channel Enhancement Mode MOSFETs produced by Panjit International Inc. The series focuses on providing efficient switching solutions for various electronic applications. The specific model integrates robust electrical characteristics within a compact surface-mount package, aligning with industry demands for high-density power management designs.
Replacement Considerations
Consult official Panjit documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other manufacturers' components without verifying pinout, voltage ratings, and thermal characteristics. Ensure any replacement maintains the same package type and electrical performance parameters.
FAQ
What is the maximum pulsed drain current for the PJS6815?
The maximum pulsed drain current (IDM) is -14.4 A.
What is the typical gate threshold voltage range?
The typical gate threshold voltage (VGS(th)) ranges from -0.4 V to -1.2 V under standard test conditions.
Is the PJS6815 suitable for medical or life-saving applications?
No, the product is not designed for equipment requiring high reliability or relating to human life, such as medical instruments or aerospace machinery.
