PJW5N10-AU_R2_000A1

$0.70

Description：100V N-CHANNEL ENHANCEMENT MODE
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8d6ed5c08f05 Category: Single FETs, MOSFETs Brand: Panjit International Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

PJW5N10-AU_R2_000A1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is 100V N-CHANNEL ENHANCEMENT MODE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PJW5N10-AU_R2_000A1

Description：100V N-CHANNEL ENHANCEMENT MODE
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：3.1A (Ta), 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：130mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：707 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for PJW5N10-AU_R2_000A1

PJW5N10-AU_R2_000A1

Single FETs, MOSFETs Overview

The PJW5N10-AU_R2_000A1 is a 100V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It operates within a junction temperature range of -55°C to +150°C and utilizes an SOT-223 package. The device supports a continuous drain current of 5A at TC=25°C and features a maximum drain-source breakdown voltage of 100V. Key electrical parameters include a gate threshold voltage ranging from 2V to 3.5V, a typical total gate charge of 12nC, and a maximum on-state resistance of 130mΩ at VGS=10V and ID=2.5A.

Single FETs, MOSFETs Feature Summary

Compliant with AEC-Q101 automotive qualification standards
Optimized for high switching speed and low gate charge
Constructed with lead-free materials compliant with EU RoHS 2.0
Utilizes green molding compound meeting IEC 61249 standard

Single FETs, MOSFETs Applications

Automotive electronic systems requiring AEC-Q101 compliance
General-purpose power switching applications
Low-side load switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix R2_000A1 against official documentation to confirm packaging details. Confirm that the component meets all required environmental standards for the intended deployment environment. Ensure compatibility with existing thermal management designs given the SOT-223 package constraints.

Single FETs, MOSFETs Selection Notes

Select this component when a 100V rating and 5A continuous current capacity are required in an SOT-223 form factor. Consider the device's thermal resistance characteristics for heat dissipation planning. Evaluate the gate charge requirements against the driving circuit capabilities to ensure efficient switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the PJW5N10 series of N-Channel Enhancement Mode MOSFETs produced by Panjit International Inc. The AU suffix indicates specific manufacturing or packaging variations within the product line. The component is designed for general power switching applications where moderate voltage ratings and compact surface-mount packaging are necessary.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution lists for verified alternatives. Cross-reference pinout configurations and electrical specifications carefully before implementation.