PJX8603_R1_00001

$0.46

Description：MOSFET N/P-CH 50V/60V SOT563
Series：-

SKU:bebef32e6f85 Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 50V/60V SOT563
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：50V, 60V
Current - Continuous Drain (Id) @ 25°C：360mA (Ta), 200mA (Ta)
Rds On (Max) @ Id, Vgs：1.5Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：1V @ 250µA, 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.95nC @ 4.5V, 1.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：36pF @ 25V, 51pF @ 25V
Power - Max：300mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：-
Qualification：-

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PJX8603_R1_00001

Overview

The PJX8603_R1_00001 is a complementary enhancement mode MOSFET in an SOT-563 package. It integrates one N-channel and one P-channel transistor with drain-source voltages of 50V and -60V, respectively. The N-channel continuous drain current is 360mA, while the P-channel is -200mA. Typical on-resistance values are 1.26Ω for the N-channel at VGS=10V and 2.6Ω for the P-channel at VGS=-10V. Total gate charges are 0.95nC (N-Ch) and 1.1nC (P-Ch). Power dissipation is 300mW at 25°C ambient temperature.

Feature Summary

Advanced trench process technology
ESD protection rated at 2kV HBM
Complementary dual configuration

Applications

Switch load applications
PWM application circuits

Procurement Notes

Verify the specific ordering suffix to confirm reel size and quantity. The R1 suffix indicates a 4K pcs / 7” reel packing code. Confirm RoHS compliance and halogen-free status requirements against the latest manufacturer documentation before finalizing procurement specifications.

Selection Notes

Select this component for low-power switching tasks requiring both N-type and P-type channels in a single compact footprint. Ensure the required drain current does not exceed 360mA for the N-channel or -200mA for the P-channel. Verify that the operating junction temperature remains within the -55°C to +150°C range during design.

Part Context

This part belongs to the PJX8603 series manufactured by Panjit International Inc. It utilizes silicon technology and is housed in an SOT-563 case. The device marking is X63. It is designed as a lead-free component compliant with EU RoHS 2.0 directives and uses green molding compound per IEC 61249 standards.