PJX8804_R1_00001

$0.46

Description：MOSFET 2N-CH 30V 0.6A SOT563
Series：-

SKU:4173b3351822 Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 0.6A SOT563
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：600mA (Ta)
Rds On (Max) @ Id, Vgs：220mOhm @ 600mA, 4,5V
Vgs(th) (Max) @ Id：1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：93pF @ 15V
Power - Max：300mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：-
Qualification：-

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PJX8804_R1_00001

Overview

The PJX8804_R1_00001 is a dual N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. in an SOT-563 package. It features a Drain-Source Voltage (VDS) of 30 V and a Continuous Drain Current (ID) of 0.6 A. The device provides low on-resistance, with RDS(on) maximums of 220 mΩ at VGS=4.5V/ID=0.6A, 290 mΩ at VGS=2.5V/ID=0.4A, and 600 mΩ at VGS=1.8V/ID=0.1A. Key electrical parameters include a Gate Threshold Voltage (VGS(th)) max of 1.3 V, Total Gate Charge (Qg) typical of 1.5 nC, and Power Dissipation (PD) of 300 mW at 25°C ambient temperature.

Feature Summary

ESD protection rated at 2 kV HBM
Advanced Trench Process Technology for low on-resistance
Halogen-free green molding compound compliant with IEC 61249 standard

Applications

Load Switch applications
PWM (Pulse Width Modulation) control circuits

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity and reel size. The datasheet lists PJX8804_R1_00002 as 4K pcs per 7-inch reel and PJX8804_R2_00002 as 10K pcs per 13-inch reel. Ensure the requested part number matches the required packing configuration before finalizing procurement orders.

Selection Notes

Select this component for low-voltage switching applications requiring ESD protection. Verify that the gate drive voltage meets the threshold requirements for the desired on-resistance level. Confirm thermal management capabilities, as power dissipation derates by 2.4 mW/°C above 25°C ambient temperature.

Part Context

This component belongs to the NFET-30TEMN series from Panjit. It utilizes Advanced Trench Process Technology to achieve low on-resistance characteristics suitable for battery-operated systems and portable electronics where space efficiency and power loss minimization are critical design constraints.