PJX8807_R1_00001

Overview

The PJX8807_R1_00001 is a dual P-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes advanced trench process technology and operates with a drain-source voltage of -20 V and a continuous drain current of -500 mA. The device features low voltage drive capability at 1.2 V, making it suitable for load switch and PWM applications. It is housed in an SOT-563 package with a maximum power dissipation of 300 mW at 25°C. The component includes ESD protection and complies with EU RoHS 2.0 standards.

Feature Summary

• Advanced Trench Process Technology
• Low Voltage Drive (1.2V)
• ESD Protected

Applications

• Load switch
• PWM Application

Procurement Notes

Verify the specific ordering suffix against official documentation to ensure correct packaging configuration. Confirm that the requested part number matches the exact electrical specifications required for the design. Check for compliance with environmental directives such as RoHS 2.0. Ensure the component is sourced from authorized channels to guarantee authenticity and traceability via lot numbers.

Selection Notes

Select this component for circuits requiring a compact dual P-Channel MOSFET solution. Consider the low gate threshold voltage for compatibility with 1.2V logic levels. Evaluate the thermal resistance and power dissipation limits relative to the operating environment. Verify that the SOT-563 package dimensions fit the available PCB space.

Part Context

This part belongs to the PJX8807 series of dual P-Channel Enhancement Mode MOSFETs produced by Panjit International Inc. The series is designed for low-voltage switching applications. The specific model PJX8807_R1_00001 indicates a particular packaging or reel configuration within the standard product line.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.