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Product Detailed Parameters
- Description：JFET N-CH 40V SOT23
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：40 V
- Current - Drain (Idss) @ Vds (Vgs=0)：5 mA @ 20 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：500 mV @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：14pF @ 20V
- Resistance - RDS(On)：100 Ohms
- Power - Max：250 mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23 (TO-236AB)
- Grade：-
- Qualification：-
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Overview
The PMBF4393,215 is an N-channel depletion-type junction field-effect transistor (JFET) manufactured by NXP Semiconductors. It is housed in a SOT-23 (TO-236AB) plastic microminiature surface-mount package with three leads. The device features symmetrical drain and source terminals that are interchangeable. Key electrical characteristics include a maximum drain-source voltage of 40 V, a maximum gate-source breakdown voltage of 40 V, and a feedback capacitance of less than 3.5 pF at 1 MHz. The on-resistance is specified at less than 100 Ω at 1 kHz.
Feature Summary
- Symmetrical silicon n-channel construction allows for interchangeable drain and source connections.
- Designed specifically for low-power chopper or switching applications within industrial circuits.
- Utilizes a plastic microminiature envelope suitable for thick and thin-film circuit integration.
Applications
- Low-power chopper circuits
- Industrial switching applications
- Thick-film hybrid circuits
- Thin-film hybrid circuits
Procurement Notes
Verify the component matches the April 1995 product specification document provided. Confirm the marking code corresponds to 'p6G' for the PMBF4393 variant. Ensure the package type is identified as SOT-23. Check for RoHS compliance status if required by specific design constraints, noting the original publication date may differ from current manufacturing standards.
Selection Notes
Select this component when a symmetrical N-channel JFET is required for low-power switching or chopper applications. The interchangeable drain and source pins offer layout flexibility. Consider the 40 V voltage rating and low feedback capacitance for appropriate signal integrity in thin-film or thick-film environments.
Part Context
The PMBF4393 belongs to a family of N-channel FETs produced by NXP Semiconductors, alongside variants such as the PMBF4391 and PMBF4392. These devices share similar structural characteristics but differ in specific electrical parameters like drain current and on-resistance thresholds. The PMBF4393 is distinguished by its specific resistance and current limits tailored for defined industrial switching loads.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official NXP channels for cross-reference data regarding equivalent components.
FAQ
Are the drain and source terminals distinct on the PMBF4393?
No, the drain and source terminals are symmetrical and interchangeable, allowing flexible circuit layout.
What is the maximum gate-source breakdown voltage for this device?
The maximum gate-source breakdown voltage is 40 V.
Does the PMBF4393 support high-frequency operation?
Yes, it has a feedback capacitance of less than 3.5 pF at 1 MHz, supporting relevant switching frequencies.
